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silicon crystal中文是什么意思

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用"silicon crystal"造句"silicon crystal"怎么读"silicon crystal" in a sentence

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  • 硅晶体

例句与用法

  • Plasma cyro - etching of high aspect ratio silicon crystal structures
    等离子体低温刻蚀单晶硅高深宽比结构
  • Silicon crystal gas sensor
    碳单晶气敏元件
  • We can change the behavior of a pure silicon crystal by doping it
    当纯矽的晶体和其它不纯物混杂在一起,矽的本质会改变。
  • In computers , these diodes are primarily germanium or silicon crystals
    在计算机中,这些二极管基本上是锗或硅晶体二极管。
  • Testing method of resistivity for silicon crystals and silicon wafers with four - point probe
    用四点探针法对硅晶体和硅片电阻率的测试方法
  • Test method for determination of impurity concentrations in silicon crystal by photoluminescence spectroscopy
    用光致发光光谱法测定硅晶体中杂质浓度的试验方法
  • Moore estimates have been produced to date , nearly every one has been built on the “ ground level , ” directly on the surface of silicon crystals
    半导体工程师完成了一项令人意想不到的成就,就是让微晶片里的电晶体密度加倍成长,这在业界称为摩尔定律。
  • P - type silicon crystal plates have been adopted in the text , which are formed mask sio2 by heat - oxygenation . and figures are diverted by normal light etching technology
    本文采用p型单晶硅片,由热氧化形成sio _ 2掩膜层,标准光刻工艺进行图形转移,用koh溶液湿法刻蚀制作倒四棱锥腐蚀坑列阵。
  • With the film thickness , which was determined using transmission electron microscopy ( tem ) , and the known material number density ( since the film is epitaxial on silicon , the number density is the same as in silicon crystals ) , this determines the ge concentration
    由通过隧道电镜( tem )决定的膜厚和已知材料的密度(因为薄膜为硅上外延,密度与硅单晶相同) ,决定了锗的浓度。
  • In czochralski silicon crystals ( czsi ) through fast neutron irradiation , formation and conversion of defects were investigated using fourier transform infrared spectroscopy ( ftir ) , positron annihilation technology ( pat ) and scanning electron microscope ( sem ) . the results showed that fast neutron irradiation induced large quantity of metastable defects which can be the capture centers of positron , positron annihilation average lifetime of samples increased with increasing of irradiation dosage . positron annihilation average lifetime of irradiation samples through dosage up to 1 1018 n . cm - 2 tended to constant
    本文对直拉硅样品进行了不同剂量的快中子辐照,在硅中引入大量的亚稳态缺陷,研究这些亚稳态缺陷的形成,并在较宽的温度范围内对辐照样品进行了退火处理,研究退火后亚稳态缺陷的转化及同硅中氧的相互作用,应用傅立叶变换红外光谱技术( ftir ) 、正电子湮没技术( pat )和扫描电镜( sem )进行了测试。
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